Nd:YVO4
Nd:YVO4 crystal is one of the most excellent laser host materials, it is suitable for diode laser-pumped solid state laser. Compactly designed Nd3+:YVO4 lasers with green, red and blue light output are really perfect means for material processing. Nd3+YVO4 diode pumped lasers have: wide absorption bandwidth, low lasing threshold, high slope efficiency, large luminescent cross-section, linearly polarized emission and single-mode output.
Advantages:
1. Lower lasing threshold and higher slope efficiency
2. Low dependency on pumping wavelength and tend to single mode output
3. Large stimulated emission cross-section at lasing wavelength
4. High absorption over a wide pumping wavelength bandwidth
5. Optically uniaxial and large birefringence emit strongly-polarized laser
Dopant | 0.1% ~ 3% |
Orientation | A-CUT +/-0.5° |
Size & Tolerance | W(+/-0.1)xH(+/-0.1)xL(+0.5/-0.1)mm |
Surface quality | 10/5 |
Perpendicularity | ≤5′ |
Parallelism | ≤10″ |
Bevel | <0.2mmx45° |
Flatness | λ/10@633nm |
Chips | <0.1mm |
TWD | λ/6@633nm |
CA | ≥95% |
Coatings | C1--- AR@1064(R<0.2%) C2--- AR@1064(R<0.2%)&532(R<0.5%) C3--- AR@1064(R<0.2%)&808(R<0.5%) C4---AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%) C5--- HR@1064(R>99.8%)&HT@808(T>95%) C6---HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%) |
Damage Threshold | 700MW/cm210ns 1Hz at 1064nm |
Space group | D4h-I4/amd |
Lattice Parameters | a=b=7.12Å, c=6.29Å |
Density | 4.22 g/cm3 |
Mohs Hardness | Glass-like, 4~5 |
Thermal Expansion Coefficient | α a=4.43x10-6/K, α c=11.37x10-6/K |
Thermal Conductivity Coefficient | | |c: 5.23 W/m/K; 丄c: 5.10 W/m/K |
Lasing Wavelengths | 914nm, 1064 nm, 1342 nm |
Thermal Optical Coefficient | dno/dT=8.5x10-6/K, dne/dT=3.0x10-6/K |
Stimulated Emission Cross-Section | 25.0x10-19 cm2 , @1064 nm |
Fluorescent Lifetime | 90 μ s @ 808 nm |
Absorption Coefficient | 31.4 cm-1 @ 808 nm |
Absorption Length | 0.32 mm @ 808 nm |
Gain Bandwidth | 0.96 nm (257 GHz) @ 1064 nm |
Diode Pumped Optical to Optical Efficiency π polarigation; | > 60% |